Magnetoresistance of high mobility HgTe quantum dot films with controlled charging-Reference-Cited by-同舟云学术

Magnetoresistance of high mobility HgTe quantum dot films with controlled charging

Published:2022 Issue:37 Volume:10 Page:13771-13777
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Menglu¹^ORCID,Lan Xinzheng²,Hudson Margaret H.²,Shen Guohua²,Littlewood Peter B.³,Talapin Dmitri V.²,Guyot-Sionnest Philippe²³

Affiliation:

1. School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, China

2. Department of Chemistry, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, USA

3. Department of Physics, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, USA

Abstract

The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1Se state charging and a relatively high mobility (1–10 cm2 V−1 s−1), is measured with controlled occupation of the first electronic state.

Funder

National Science Foundation

U.S. Department of Defense

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05202K

Reference35 articles.

1. Building devices from colloidal quantum dots

2. Ultrasensitive solution-cast quantum dot photodetectors

3. Enhanced mobility CsPbI 3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

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5. Dependence of Carrier Mobility on Nanocrystal Size and Ligand Length in PbSe Nanocrystal Solids

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