Affiliation:
1. School of Optics and Photonics Beijing Institute of Technology No. 5, Zhongguancun South Street Beijing 100081 China
2. Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology Beijing 100081 China
3. Yangtze Delta Region Academy of Beijing Institute of Technology Jiaxing 314019 China
Abstract
AbstractDue to the appeal of room temperature operation and low‐cost potential, colloidal quantum dots (CQDs) have become an alternative to traditional epitaxial materials for infrared photodetection. However, various device structure designs and different functional material layers are required to obtain high photodetection performances for different infrared subranges. In this work, a straightforward method is introduced for building CQD p‐i‐n homojunction as well as the inverted n‐i‐p homojunction photodetector, by preparing various doping type and density CQD inks with a mixed phase ligand exchange method. It is approved that both normal and inverted homojunctions show the specific detectivity D* as high as 1012‐1011 Jones and external quantum efficiency near 90% at high operating temperature. It is also approved that the method works for multiple infrared subranges such as 1.5 µm that covers the conventional wavelength for fiber‐optical communication (1530–1565 nm), 1.3–1.9 µm that is about the short‐wave infrared (SWIR), 1.3–2.5 µm that covers extend SWIR (beyond the standard InGaAs sensors, 1.75 µm), and 3.6 µm that belongs to mid‐wave infrared (MWIR). Applications such as spectrometer and infrared imager are also demonstrated.
Funder
National Natural Science Foundation of China
Beijing Nova Program
Subject
Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science
Cited by
6 articles.
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