Optical properties of orthorhombic germanium selenide: an anisotropic layered semiconductor promising for optoelectronic applications-Reference-Cited by-同舟云学术

Optical properties of orthorhombic germanium selenide: an anisotropic layered semiconductor promising for optoelectronic applications

Published:2021 Issue:41 Volume:9 Page:14838-14847
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tołłoczko Agata¹^ORCID,Zelewski Szymon J.¹^ORCID,Błaszczak Michał¹,Woźniak Tomasz¹^ORCID,Siudzińska Anna²,Bachmatiuk Alicja²,Scharoch Paweł¹,Kudrawiec Robert¹²

Affiliation:

1. Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

2. Łukasiewicz Research Network – PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław, Poland

Abstract

The fundamental optical properties and photoconversion efficiency of GeSe, a strongly anisotropic semiconducting van der Waals crystal, are studied by exploiting a complementary combination of spectroscopic methods and photogenerated current measurements.

Funder

Narodowe Centrum Nauki

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC04280G

Reference76 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. 2D materials and van der Waals heterostructures

3. Phosphorene – The two-dimensional black phosphorous: Properties, synthesis and applications