Highly sensitive and fast phototransistor based on large size CVD-grown SnS2nanosheets-Reference-Cited by-同舟云学术

Highly sensitive and fast phototransistor based on large size CVD-grown SnS2nanosheets

Published:2015 Issue:33 Volume:7 Page:14093-14099
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Huang Yun¹²³,Deng Hui-Xiong⁴⁵⁶⁷,Xu Kai¹²³,Wang Zhen-Xing¹²³,Wang Qi-Sheng¹²³,Wang Feng-Mei¹²³,Wang Feng¹²³,Zhan Xue-Ying¹²³,Li Shu-Shen⁴⁵⁶⁷,Luo Jun-Wei⁴⁵⁶⁷⁸,He Jun¹²³

Affiliation:

1. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication

2. National Center for Nanoscience and Technology

3. Beijing, P. R. China

4. State Key Laboratory of Superlattices and Microstructures

5. Institute of Semiconductors

6. Chinese Academy of Sciences

7. Beijing, P.R. China

8. Synergetic Innovation Center of Quantum Information and Quantum Physics

Abstract

A highly sensitive phototransistor with a large on/off ratio and short photoresponse time is fabricated on CVD grown SnS₂NSs.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04174K

Reference51 articles.

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5. Electric Field Effect in Atomically Thin Carbon Films

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