Effects of terminal electron acceptor strength on film morphology and ternary memory performance of triphenylamine donor based devices-Reference-Cited by-同舟云学术

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Effects of terminal electron acceptor strength on film morphology and ternary memory performance of triphenylamine donor based devices

Published:2013 Issue:24 Volume:1 Page:3816
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhuang Hao,Zhang Qijian,Zhu Yongxiang,Xu Xufeng,Liu Haifeng,Li Najun,Xu Qingfeng,Li Hua,Lu Jianmei,Wang Lihua

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC30228H

Reference35 articles.

1. Nonvolatile Memory Elements Based on Organic Materials

2. Polymer electronic memories: Materials, devices and mechanisms

3. Fabrication of Flexible, All-Reduced Graphene Oxide Non-Volatile Memory Devices

4. Memory Devices Based on Lanthanide (Sm3+, Eu3+, Gd3+) Complexes

5. Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

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4. Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D−π−A Based Ester‐Flanked Quinolines**;Chemistry – A European Journal;2022-12-27

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