Enhanced intra/intermolecular charge transfer for efficient multilevel resistive memory-Reference-Cited by-同舟云学术

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Enhanced intra/intermolecular charge transfer for efficient multilevel resistive memory

Published:2022-10 Issue: Volume:599 Page:153877
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cheng Xiaozhe,Lian Hong,Yao Lingling,Xia Weizhen,Han Jinba,Fan Jianfeng,Dong Qingchen,Wong Wai-Yeung

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference45 articles.

1. Emerging memories: resistive switching mechanisms and current status;Jeong;Phys. Soc.,2012

2. Pseudohalide-induced 2D (CH3NH3)2PbI2(SCN)2 perovskite for ternary resistive memory with high performance;Cheng;Small,2018

3. Evolving spiking networks with variable resistive memories;Howard;Evol. Comput.,2014

4. Tailoring of molecular planarity to reduce charge injection barrier for high-performance small-molecule-based ternary memory device with low threshold voltage;Miao;Adv. Mater.,2012

5. Synthesis, characterization, and nonvolatile ternary memory behavior of a larger heteroacene with nine linearly fused rings and two different heteroatoms;Gu;J. Am. Chem. Soc.,2013

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3. Enhanced performance of conjugated polymer-based ternary memory devices by embedding Pt nanoparticles;Synthetic Metals;2024-03

4. Recent advances of carbon dot-based memristors: Mechanisms, devices, and applications;Applied Materials Today;2024-02

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