Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High-Performance Small-Molecule-Based Ternary Memory Device with Low Threshold Voltage-Reference-Cited by-同舟云学术

Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High-Performance Small-Molecule-Based Ternary Memory Device with Low Threshold Voltage

Published:2012-09-13 Issue:46 Volume:24 Page:6210-6215
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Miao Shifeng,Li Hua,Xu Qingfeng,Li Youyong,Ji Shunjun,Li Najun,Wang Lihua,Zheng Junwei,Lu Jianmei

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201202319/fullpdf

Reference35 articles.

1. Nonvolatile Memory Elements Based on Organic Materials

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4. Three-Dimensional Optical Data Storage Using Photochromic Materials

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