Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study-Reference-Cited by-同舟云学术

Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study

Author:

Biswas Parthapratim¹²³⁴^ORCID,Paudel Durga¹²³⁴,Atta-Fynn Raymond⁵⁶⁷⁴,Elliott Stephen R.⁸⁹¹⁰¹¹

Affiliation:

1. Department of Physics and Astronomy

2. The University of Southern Mississippi

3. Hattiesburg

4. USA

5. Department of Physics

6. University of Texas at Arlington

7. Arlington

8. Department of Chemistry

9. University of Cambridge

10. Cambridge

11. UK

Abstract

The paper presents an ab initio study of temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon.

Funder

Division of Materials Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference59 articles.

5. M. Zeman and D.Zhang , Heterojunction Silicon Based Solar Cells , Springer Berlin Heidelberg , 2012 , pp. 13–43

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