Hetero-epitaxial growth of stoichiometry tunable Si1−xGexfilm via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process-Reference-Cited by-同舟云学术

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Hetero-epitaxial growth of stoichiometry tunable Si1−xGexfilm via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process

Published:2015 Issue:33 Volume:17 Page:6269-6273
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lin Chuan-Jung,Wei Sung-Yen,Hsu Chien-Chung,Yu Sheng-Min,Sun Wen-Ching,Lin Tzer-Shen,Chen Fu-Rong

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CE/C5CE00956A

Reference27 articles.

1. Low-Temperature Epitaxial Growth ofSi/Si1-xGex/SiHeterostructure by Chemical Vapor Deposition

2. Relaxed Si 0.7 Ge 0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

3. Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

4. Investigation on the growth rate enhancement by Ge during SiGe alloy deposition by chemical vapor deposition

5. Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation

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1. Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting;Journal of Electronic Materials;2021-10-05

2. Metal-induced layer exchange of group IV materials;Journal of Physics D: Applied Physics;2020-06-29

3. Effects of Al thickness on one-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering;Materials Letters;2017-12

4. In situ X-ray diffraction study on epitaxial growth of SixGe1−x on Si by aluminium-assisted crystallization;Journal of Alloys and Compounds;2017-02

5. Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization;Scripta Materialia;2016-09

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