The enhanced performance of a Si–As–Se ovonic threshold switching selector-Reference-Cited by-同舟云学术

The enhanced performance of a Si–As–Se ovonic threshold switching selector

Published:2021 Issue:38 Volume:9 Page:13376-13383
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yuan Zhenhui¹²^ORCID,Li Xiaodan¹²,Song Sannian¹²,Song Zhitang¹²,Zha Jiawei³,Han Gang³,Yang Bingjun³,Jimbo Takehito⁴,Suu Koukou³⁴

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. ULVAC Research Center Suzhou Co., Ltd, Suzhou 215026, China

4. ULVAC, Inc., Kanagawa 253-8543, Japan

Abstract

Si–As–Se based OTS materials are studied, the increasing content of silicon leads to a larger threshold voltage and smaller off-state current.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Chinese Academy of Sciences

State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC02730A

Reference48 articles.

1. Fully hardware-implemented memristor convolutional neural network

2. What Will Come After V‐NAND—Vertical Resistive Switching Memory?

3. Power-efficient combinatorial optimization using intrinsic noise in memristor Hopfield neural networks

4. A comparative performance analysis of phase change memory as main memory and DRAM

5. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

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