Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells-Reference-Cited by-同舟云学术

Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

Published:2023 Issue:11 Volume:2 Page:1818-1822
ISSN:2753-1457
Container-title:Energy Advances
language:en
Short-container-title:Energy Adv.

Author:

Walter Arnaud¹^ORCID,Kamino Brett A.¹^ORCID,Moon Soo-Jin¹,Wyss Patrick¹,Diaz Leon Juan J.¹,Allebé Christophe¹,Descoeudres Antoine¹,Nicolay Sylvain¹,Ballif Christophe¹²,Jeangros Quentin¹,Ingenito Andrea¹^ORCID

Affiliation:

1. CSEM SA, Sustainable Energy, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland

2. Institute of Electrical and Microengineering (IEM), Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, 2002 Neuchâtel, Switzerland

Abstract

High temperature passivating p-type contacts on textured surfaces with iVOC up to 725 mV and contact resistance below 90 mΩ cm2. 28.25% tandem PK/c-Si solar cells rear side textured with high temperature passivating contacts.

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

Royal Society of Chemistry (RSC)

Subject

Energy (miscellaneous),Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment

Link

http://pubs.rsc.org/en/content/articlepdf/2023/YA/D3YA00048F

Reference35 articles.

1. NREL, Best Res. Effic. Chart

2. Interface passivation for 31.25%-efficient perovskite/silicon tandem solar cells

3. Interface engineering for high-performance, triple-halide perovskite–silicon tandem solar cells

4. Monolithic Perovskite‐Silicon Tandem Solar Cells: From the Lab to Fab?

5. Monolithic perovskite/silicon tandem solar cell with >29% efficiency by enhanced hole extraction

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