Epitaxial highly ordered Sb:SnO2 nanowires grown by the vapor liquid solid mechanism on m-, r- and a-Al2O3-Reference-Cited by-同舟云学术

Epitaxial highly ordered Sb:SnO2 nanowires grown by the vapor liquid solid mechanism on m-, r- and a-Al2O3

Published:2019 Issue:5 Volume:1 Page:1980-1990
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Zervos M.¹²³⁴⁵^ORCID,Lathiotakis N.⁶⁷⁸⁹^ORCID,Kelaidis N.¹⁰¹¹¹²¹³,Othonos A.¹⁴¹⁵³⁴⁵,Tanasa E.¹⁶¹⁷¹⁸¹⁹,Vasile E.¹⁶¹⁷¹⁸¹⁹

Affiliation:

1. Nanostructured Materials and Devices Laboratory

2. School of Engineering

3. University of Cyprus

4. Nicosia

5. Cyprus

6. Theoretical and Physical Chemistry Institute

7. National Hellenic Research Foundation

8. GR-11635 Athens

9. Greece

10. Faculty of Engineering, Environment and Computing

11. Coventry University

12. Coventry CV1 5FB

13. UK

14. Laboratory of Ultrafast Science

15. Department of Physics

16. Department of Science and Engineering of Oxide Materials and Nanomaterials

17. Politehnica University of Bucharest

18. Bucharest

19. Romania

Abstract

Epitaxial, highly ordered Sb:SnO₂ nanowires were grown by the vapor–liquid–solid mechanism on m-, r- and a-Al₂O₃ between 700 °C and 1000 °C using metallic Sn and Sb with a mass ratio of Sn/Sb = 0.15 ± 0.05 under a flow of Ar and O₂ at 1 ± 0.5 mbar.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NA/C9NA00074G

Reference60 articles.

1. Transparent metallic Sb-doped SnO2 nanowires

2. Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

3. Structural and optical properties of Al-doped ZnO nanowires synthesized by hydrothermal method

4. Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

5. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

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