Tailoring the electroluminescence of a single microwire based heterojunction diode using Ag nanowires deposition
Author:
Affiliation:
1. College of Science
2. Nanjing University of Aeronautics and Astronautics
3. Nanjing
4. China
5. Key Laboratory for Intelligent Nano Materials and Devices (MOE)
Abstract
A single Ga-doped ZnO microwire covered by Ag nanowires (AgNWs@ZnO:Ga MW) was utilized to construct a promising ultraviolet light source, with p-GaN serving as a hole injection layer.
Funder
National Natural Science Foundation of China
Government of Jiangsu Province
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00049C
Reference60 articles.
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4. Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications
5. Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures
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