Investigation of the surface passivation mechanism through an Ag-doped Al-rich film using a solution process
Author:
Affiliation:
1. Division of Nano and Energy Convergence Research
2. Daegu Gyeongbuk Institute of Science & Technology (DGIST)
3. Daegu 711-873, Republic of Korea
Abstract
A cost effective, hydrogen annealed Ag-doped Al-rich zinc oxide film for excellent passivation of silicon surfaces via a solution process.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR06883E
Reference32 articles.
1. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3
2. Field-effect passivation of the SiO2Si interface
3. Sol–gel derived hydrogen annealed ZnO:Al films for silicon solar cell application
4. Effective passivation of silicon surface by AZO films: Application in bifacial solar cells
5. Enhanced performance of silicon solar cells by application of low-cost sol–gel-derived Al-rich ZnO film
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