Indium-doping-induced selenium vacancy engineering of layered tin diselenide for improving room-temperature sulfur dioxide gas sensing-Reference-Cited by-同舟云学术

Indium-doping-induced selenium vacancy engineering of layered tin diselenide for improving room-temperature sulfur dioxide gas sensing

Published:2022 Issue:42 Volume:10 Page:22629-22637
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Guo Xuezheng¹²³,Shi Yijie²,Ding Yanqiao²,He Yuhui⁴^ORCID,Du Bingsheng¹²³,Liang Chengyao¹²³,Tan Yiling¹,Liu Peilin¹,Miao Xiangshui⁴^ORCID,He Yong²³^ORCID,Yang Xi¹^ORCID

Affiliation:

1. Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China

2. Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

3. State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China

4. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract

Cation-doping engineering was utilized to induce selenium vacancies in tin diselenide for high-performance and room-temperature sulfur dioxide gas sensing.

Funder

Chongqing Research Program of Basic Research and Frontier Technology

National Natural Science Foundation of China

National Safety Academic Fund

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TA/D2TA04317C

Reference56 articles.