Defect Engineering in Transition Metal Dichalcogenide-Based Gas Sensors

Author:

Fu Xiaqing1,Qiao Zirui2ORCID,Zhou Hangyu3,Xie Dan4

Affiliation:

1. School of Microelectronics, Shanghai University, Shanghai 201800, China

2. Department of Chemistry, Tsinghua University, Beijing 100084, China

3. China Academy of Safety Science and Technology, Beijing 100012, China

4. School of Integrated Circuits, Tsinghua University, Beijing 100084, China

Abstract

Since the discovery of innovative two-dimensional (2D) materials, significant efforts have been dedicated to exploring their intriguing properties and emerging applications. Among all candidates, transition metal dichalcogenides (TMDs) have proven to be exceptional for gas sensing, while defects engineering has been introduced to modify the pristine TMDs for better gas sensing performances. In this review, we systematically summarize types of defects, advanced characterization techniques, and state-of-the-art controllable synthetic methods. Various types of defects in TMDs can induce diverse changes in chemical and electron structures, which are closely correlated with gas sensing ability. Therefore, connections between defects and gas sensing mechanisms and performances have been addressed based on both defect categories and electron affinity of gases. This review will be a guide for researchers in defective materials and open up the field of precisely synthesis chemistry and deepen the understanding of the underlying effects of defects in other 2D materials.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Science Foundation of China Academy of Safety Science and Technology

Publisher

MDPI AG

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