Optoelectronic property comparison for isostructural Cu2BaGeSe4 and Cu2BaSnS4 solar absorbers-Reference-Cited by-同舟云学术

Optoelectronic property comparison for isostructural Cu2BaGeSe4 and Cu2BaSnS4 solar absorbers

Published:2021 Issue:41 Volume:9 Page:23619-23630
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Kim Yongshin¹^ORCID,Hempel Hannes²,Levcenco Sergiu²^ORCID,Euvrard Julie¹^ORCID,Bergmann Eric³,Gunawan Oki⁴,Unold Thomas²^ORCID,Hill Ian G.³,Mitzi David B.¹⁵^ORCID

Affiliation:

1. Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, USA

2. Department Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109, Berlin, Germany

3. Department of Physics, Dalhousie University, 6310 Coburg Road, Halifax, Nova Scotia, B3H 4R2, Canada

4. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA

5. Department of Chemistry, Duke University, Durham, North Carolina 27708, USA

Abstract

This study identifies key underlying differences in electronic properties of vacuum-deposited Cu2BaGeSe4 and Cu2BaSnS4 thin films.

Funder

Basic Energy Sciences

Division of Electrical, Communications and Cyber Systems

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject