Pressure-driven structural and electronic transitions in a quasimolecular layered compound of antimony triiodide-Reference-Cited by-同舟云学术

Pressure-driven structural and electronic transitions in a quasimolecular layered compound of antimony triiodide

Published:2023 Issue:23 Volume:10 Page:6849-6859
ISSN:2052-1553
Container-title:Inorganic Chemistry Frontiers
language:en
Short-container-title:Inorg. Chem. Front.

Author:

Hong Meiling¹,Dai Lidong¹^ORCID,Hu Haiying¹^ORCID,Zhang Xinyu¹²,Li Chuang¹²,Feng Xiaolei³,Yu Shidong⁴^ORCID,Zhang Limin¹²,Mi Zhongying¹,Aswathappa Sivakumar¹

Affiliation:

1. Key Laboratory of High-Temperature and High-Pressure Study of the Earth's Interior, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang, Guizhou 550081, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore

4. Asian School of the Environment, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore

Abstract

High-pressure structural and electronic transitions of SbI3 under different hydrostatic environments were investigated using synchrotron X-ray diffraction, Raman spectroscopy, electrical conductivity and first-principles theoretical calculations.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/QI/D3QI01126G

Reference45 articles.

1. Optical properties of SbI3 single crystalline platelets

2. Fabrication and characterisation of SbI3-opal structures

3. Polyol method synthesis and characterization of nanoscale Sb2Se3 wires

4. Evaluation of Antimony Tri-Iodide Crystals for Radiation Detectors

5. Iodization of antimony thin films: XRD, SEM and optical studies of nanostructured SbI3

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoelectric properties surge driven by molecular-ionic crystal transition in layered antimony triiodide under high pressure;Acta Materialia;2024-10

2. Pressure-induced ferroelectric and electronic transitions in two-dimensional ferroelectric semiconductor of NbOCl2 up to 41.7 GPa;Applied Physics Letters;2024-03-11