Pressure-induced ferroelectric and electronic transitions in two-dimensional ferroelectric semiconductor of NbOCl2 up to 41.7 GPa

Abstract

NbOCl2, a representative van der Waals ferroelectric (FE) semiconductor, has become the research frontier due to its peculiar appeal in both fundamental research studies and potential applications. In the present work, the high-pressure structural, vibrational, and electrical transport properties of NbOCl2 under different hydrostatic environments were systematically investigated over a wide pressure range of 1.7–41.7 GPa using a diamond anvil cell coupled with in situ Raman spectroscopy, electrical conductivity, and high-resolution transmission electron microscopy (HRTEM) observations. Upon non-hydrostatic compression, NbOCl2 underwent a FE-to-antiferroelectric phase transition at 3.4 GPa, followed by a semiconductor-to-metal transformation at 15.7 GPa. Under hydrostatic compression, the FE transformation and metallization of NbOCl2 were postponed by ∼2.0 and ∼4.0 GPa due to the effect of helium pressure-transmitting medium. Upon decompression, the phase transition was demonstrated to be reversible under different hydrostatic environments, which was well corroborated by HRTEM analyses. In addition, the linear relations between electrical current and sinusoidal voltage with the nonlinearity factors of ∼1.0 reflect the Ohmic response of NbOCl2 before and after the FE transition. Our findings on NbOCl2 provide a guideline for exploring other layered FE materials under high pressure and establishing a design paradigm for new generations of FE-based devices.