Anti-ambipolar behavior and photovoltaic effect in p-MoTe2/n-InSe heterojunctions-Reference-Cited by-同舟云学术

Anti-ambipolar behavior and photovoltaic effect in p-MoTe2/n-InSe heterojunctions

Published:2021 Issue:32 Volume:9 Page:10372-10380
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sun Yiming¹²,Gao Wei¹²,Li Xueping³^ORCID,Xia Congxin³^ORCID,Chen Hongyu¹²^ORCID,Zhang Li¹²^ORCID,Luo Dongxiang¹²,Fan Weijun⁴^ORCID,Huo Nengjie¹²^ORCID,Li Jingbo¹²

Affiliation:

1. Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China

2. Guangdong Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China

3. College of Physics and Materials Science, Henan Normal University, Xinxiang, 453600, Henan, China

4. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

Abstract

The MoTe2/InSe heterojunctions exhibit an anti-ambipolar behavior with high peak-to-valley current ratio (>103) and a high self-driven photodetection performance with photoresponsivity of 15.4 mA W−1 and specific detectivity up to ∼3.02 × 1014 Jones.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC02497C

Reference41 articles.

1. Graphene photodetectors with ultra-broadband and high responsivity at room temperature

2. Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature