Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors-Reference-Cited by-同舟云学术

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

Author:

Wang Han¹²³,Sun Tieyu⁴⁵⁶,Xu Wangying¹²³,Xie Fangyan⁷⁸⁹,Ye Lei¹²³,Xiao Yubin¹²³,Wang Yu⁴⁵⁶,Chen Jian⁷⁸⁹,Xu Jianbin¹²³

Affiliation:

1. Department of Electronic Engineering and Materials Science and Technology Research Center

2. The Chinese University of Hong Kong

3. Hong Kong SAR, P. R. China

4. Department of Applied Physics and Material Research Center

5. The Hong Kong Polytechnic University

6. Kowloon, Hong Kong SAR, P. R. China

7. Instrumental Analysis & Research Center

8. Sun Yat-Sen (Zhongshan) University

9. Guangzhou, P. R. China

Abstract

An improved hydrophilic aluminum nitrate solution was designed to spin coat robust dielectric layers for thin film transistors.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

Reference40 articles.

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