Optimization of structural, electrical, and magnetic properties of the solution-processed IZO MOSFET adopting spin coating technique and its performance-Reference-Cited by-同舟云学术

Optimization of structural, electrical, and magnetic properties of the solution-processed IZO MOSFET adopting spin coating technique and its performance

Published:2024-08 Issue:23 Volume:35 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Lephe S.,Raj S. M. Gifrin Fredik,Janaki S.,Jamina C.,Das S. Jerome,Dhas S. Sahaya Jude,Jose L. Arun^ORCID

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s10854-024-13331-8.pdf

Reference28 articles.

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2. L. Lu, M. Echizen, T. Nishida, Y. Ishikawa, K. Uchiyama, Y. Uraoka, Low-temperature fabrication of solution-processed InZnO thin-film transistors with Si impurities by UV/O3-assisted annealing. AIP Adv. 2, 032111 (2012). https://doi.org/10.1063/1.4739052

3. H. Wang, T. Sun, W. Xu, F. Xie, L. Ye, Y. Xiao et al., Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors. RSC Adv. (2014). https://doi.org/10.1039/C4RA09077B

4. J. Peng, Q.-J. Sun, S. Wang, H.-Q. Wang, W. Ma, Low-temperature solution-processed alumina as gate dielectric for reducing the operating-voltage of organic field-effect transistors. Appl. Phys. Lett. (2013). https://doi.org/10.1063/1.4818343

5. F. Shan, S.W. Chang, J.-H. Koh, S.-J. Kim, Effect of spin coating speed on the electrical performances of solution-processed indium zinc oxide thin-film transistors. J. Nanosci. Nanotechnol. 16, 12871–12874 (2016). https://doi.org/10.1166/jnn.2016.13679