Transport properties and enhanced thermoelectric performance of aluminum doped Cu3SbSe4
Author:
Affiliation:
1. Key Laboratory of Materials Physics
2. Institute of Solid State Physics
3. Chinese Academy of Sciences
4. 230031 Hefei
5. People's Republic of China
Abstract
The electrical transport and thermoelectric properties of Cu3Sb1−xAlxSe4 (x = 0, 0.01, 0.02 and 0.03) compounds are investigated in the temperature range of 300–600 K.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA02030A
Reference19 articles.
1. High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys
2. Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
3. Improved Thermoelectric Properties of Cu-Doped Quaternary Chalcogenides of Cu2CdSnSe4
4. Cu−Se Bond Network and Thermoelectric Compounds with Complex Diamondlike Structure
5. Thermoelectric properties of tetrahedrally bonded wide-gap stannite compounds Cu2ZnSn1−xInxSe4
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