Reactive etching of gallium oxide on eutectic gallium indium (eGaIn) with chlorosilane vapor to induce differential wetting-Reference-Cited by-同舟云学术

Reactive etching of gallium oxide on eutectic gallium indium (eGaIn) with chlorosilane vapor to induce differential wetting

Published:2023 Issue:17 Volume:19 Page:3199-3206
ISSN:1744-683X
Container-title:Soft Matter
language:en
Short-container-title:Soft Matter

Author:

Hossain Kazi Zihan¹^ORCID,Monwar Momena¹,Khan M. Rashed¹^ORCID

Affiliation:

1. Department of Chemical and Materials Engineering, University of Nevada, Reno, Reno, Nevada 89557, USA

Abstract

We report three steps (patterning, silanizing, and rinsing) in achieving unconventional differential wetting. Chlorosilane vapor chemically etches Ga2O3 from pre-programmed 2D patterns of eGaIn under vacuum, yielding hydrophobic–hydrophilic regions once rinsed with DI water.

Funder

University of Nevada, Reno

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/SM/D3SM00258F

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