Impedance analysis of secondary phases in a Co-implanted ZnO single crystal-Reference-Cited by-同舟云学术

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Impedance analysis of secondary phases in a Co-implanted ZnO single crystal

Published:2014 Issue:30 Volume:16 Page:16030-16038
ISSN:1463-9076
Container-title:Phys. Chem. Chem. Phys.
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Younas M.¹²³⁴⁵,Zou L. L.¹²³,Nadeem M.⁴⁵⁶⁷,Naeem-ur-Rehman Naeem-ur-Rehman¹²³⁸⁹,Su S. C.¹²³,Wang Z. L.¹²³,Anwand W.¹⁰¹¹¹²,Wagner A.¹⁰¹¹¹²,Hao J. H.¹³¹⁴¹⁵¹⁶,Leung C. W.¹³¹⁴¹⁵¹⁶,Lortz R.¹¹⁷¹⁸,Ling F. C. C.¹²³

Affiliation:

1. Department of Physics

2. The University of Hong Kong

3. Hong Kong, P. R. China

4. EMMG

5. Physics Division

6. PINSTECH

7. Islamabad, Pakistan

8. Department of Metallurgy and Materials Engineering

9. PIEAS

10. Institute of Radiation Physics

11. Helmholtz-Zentrum Dresden-Rossendorf

12. , Germany

13. Department of Applied Physics

14. The Hong Kong Polytechnic University

15. Hong Kong

16. P. R. China

17. Hong Kong University of Science and Technology

18. Kowloon, P. R. China

Abstract

Co ions with 100 keV energy with a fluence of 1 × 10¹⁵ cm⁻² are implanted into ZnO(0001) single crystals at 300 °C under vacuum.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CP/C4CP00951G

Reference52 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Material Design for Transparent Ferromagnets with ZnO-Based Magnetic Semiconductors

3. Magnetic and electric properties of transition-metal-doped ZnO films

4. Impurity-ion pair induced high-temperature ferromagnetism in Co-doped ZnO

5. Evidence of Cobalt-Vacancy Complexes inZn1−xCoxODilute Magnetic Semiconductors

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