Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe2-Reference-Cited by-同舟云学术

Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe2

Published:2019 Issue:40 Volume:11 Page:18575-18581
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Liu Xingen¹²³⁴⁵^ORCID,Yang Yali¹²³⁴⁵,Hu Tao¹²³⁴⁵^ORCID,Zhao Guodong¹²³⁴⁵^ORCID,Chen Chen¹²³⁴⁵,Ren Wei¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics, and State Key Laboratory of Advanced Special Steel

2. and International Center of Quantum and Molecular Structures

3. Shanghai University

4. Shanghai 200444

5. China

Abstract

Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe₂, leading to the spin texture and spin-FET design with strain tunability.

Funder

National Natural Science Foundation of China

State Key Laboratory of Solidification Processing

Österreichische Forschungsförderungsgesellschaft

China Postdoctoral Science Foundation

China Scholarship Council

Fok Ying Tung Education Foundation

Ministry of Science and Technology of the People's Republic of China

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR05404A

Reference56 articles.

1. Applications of Modern Ferroelectrics

2. Ferroelectric thin films: Review of materials, properties, and applications

3. Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3

4. Mechanical Writing of Ferroelectric Polarization

5. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

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