BiFeO3 thin films prepared on metallic Ni tapes by chemical solution deposition: effects of annealing temperature and a La0.5Sr0.5TiO3 buffer layer on the dielectric, ferroelectric and leakage properties-Reference-Cited by-同舟云学术

BiFeO3 thin films prepared on metallic Ni tapes by chemical solution deposition: effects of annealing temperature and a La0.5Sr0.5TiO3 buffer layer on the dielectric, ferroelectric and leakage properties

Published:2014 Issue:62 Volume:4 Page:32738-32743
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Tang Xianwu¹²³⁴,Hu Ling¹²³⁴,Yang Jie¹²³⁴,Chen Li¹²³⁴,Dai Jianming¹²³⁴,Song Wenhai¹²³⁴,Yang Zhaorong¹²³⁴,Zhu Xuebin¹²³⁴,Sun Yuping¹²³⁴⁵

Affiliation:

1. Key Laboratory of Materials Physics

2. Institute of Solid State Physics

3. Chinese Academy of Sciences

4. Hefei 230031, China

5. High Magnetic Field Laboratory

Abstract

Introducing a La_0.5Sr_0.5TiO₃ buffer layer is beneficial for the microstructures and properties of BiFeO₃ thin films on metallic tapes.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA04436C

Reference34 articles.

1. Physics and Applications of Bismuth Ferrite

2. Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures

3. Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

4. Multiferroic BiFeO3 thin films processed via chemical solution deposition: Structural and electrical characterization

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