Performance enhancement of a p-Si/n-ZnGa2O4 heterojunction solar-blind UV photodetector through interface engineering
Author:
Affiliation:
1. State Key Laboratory of Luminescence and Applications
2. Changchun Institute of Optics
3. Fine Mechanics and Physics
4. Chinese Academy of Sciences
5. Changchun 130033
Abstract
Introduction of an SiO2 interfacial layer significantly enhanced the performance of a p-Si/n-ZnGa2O4 heterojunction solar-blind UV photodetector.
Funder
Youth Innovation Promotion Association of the Chinese Academy of Sciences
National Natural Science Foundation of China
State Key Laboratory of Luminescence and Applications
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01705E
Reference48 articles.
1. Effect of Sulfide Precursor Selection on the Nucleation, Growth, and Elemental Composition of Cu2ZnSnS4 Nanocrystals
2. Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
3. Self-powered solar-blind ZnGa2O4 UV photodetector with ultra-fast response speed
4. Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 Thin Films
5. In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity
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