Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers-Reference-Cited by-同舟云学术

Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

Published:2021 Issue: Volume:227 Page:163-170
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

Molas Maciej R.¹²³⁴⁵^ORCID,Tyurnina Anastasia V.⁶⁷⁸⁹⁷,Zólyomi Viktor⁶⁷⁸⁹⁷,Ott Anna K.¹⁰¹¹¹²⁸,Terry Daniel J.⁶⁷⁸⁹⁷,Hamer Matthew J.⁶⁷⁸⁹⁷,Yelgel Celal⁹⁷¹³⁸,Babiński Adam¹²³⁴⁵^ORCID,Nasibulin Albert G.¹⁴¹⁵¹⁶,Ferrari Andrea C.¹⁰¹¹¹²⁸,Fal’ko Vladimir I.⁶⁷⁸⁹⁷,Gorbachev Roman⁶⁷⁸⁹⁷

Affiliation:

1. Institute of Experimental Physics

2. Faculty of Physics

3. University of Warsaw

4. 02-093 Warszawa

5. Poland

6. School of Physics and Astronomy

7. University of Manchester

8. UK

9. National Graphene Institute

10. Cambridge Graphene Centre

11. University of Cambridge

12. Cambridge

13. Manchester

14. Skolkovo Institute of Science and Technology

15. 143026 Moscow

16. Russia

Abstract

We investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy.

Funder

Engineering and Physical Sciences Research Council

Narodowe Centrum Nauki

Samsung

Royal Society

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/FD/D0FD00007H

Reference34 articles.