Reactive chemical vapor deposition of heteroepitaxial Ti1−xAlxN films-Reference-Cited by-同舟云学术

Reactive chemical vapor deposition of heteroepitaxial Ti1−xAlxN films

Published:2018 Issue:12 Volume:20 Page:1711-1715
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Mercier F.¹²³⁴⁵^ORCID,Shimoda H.¹²³⁴⁵,Lay S.¹²³⁴⁵,Pons M.¹²³⁴⁵,Blanquet E.¹²³⁴⁵

Affiliation:

1. Univ. Grenoble Alpes

2. CNRS

3. Grenoble INP

4. SIMaP

5. F-38000 Grenoble

Abstract

A novel methodology combining CVD experiments, nanoscale characterisation and reaction–diffusion modelling demonstrates Ti_1−xAl_xN epitaxial growth on single crystalline AlN films.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C7CE02129A

Reference36 articles.

1. Energetic balance and kinetics for the decomposition of supersaturated Ti1−xAlxN

2. Influence of residual stresses and grain size on the spinodal decomposition of metastable Ti1−xAlxN coatings

3. Thermal stability and mechanical properties of arc evaporated Ti–Al–Zr–N hard coatings

4. Aluminum-rich TiAlCN coatings by Low Pressure CVD

5. The influence of bias voltage on structure and mechanical/tribological properties of arc evaporated Ti–Al–V–N coatings

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