In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy-Reference-Cited by-同舟云学术

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In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

Published:2016 Issue:18 Volume:8 Page:9704-9713
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lee Jonghoon,Varshney Vikas,Park Jeongho,Farmer Barry L.,Roy Ajit K.

Funder

Air Force Office of Scientific Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C6NR01396A

Reference24 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Single-layer MoS2 transistors

4. Van der Waals heterostructures

5. Boron nitride substrates for high-quality graphene electronics

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1. Analytical Model of CVD Growth of Graphene on Cu(111) Surface;Nanomaterials;2022-08-27

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3. Density functional tight binding study of β-Ga2O3: Electronic structure, surface energy, and native point defects;The Journal of Chemical Physics;2019-05-07

4. Atomic simulation of carbon nanomaterials for energy application;Carbon Based Nanomaterials for Advanced Thermal and Electrochemical Energy Storage and Conversion;2019

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