A highly selective electron affinity facilitated H2S sensor: the marriage of tris(keto-hydrazone) and an organic field-effect transistor-Reference-Cited by-同舟云学术

A highly selective electron affinity facilitated H2S sensor: the marriage of tris(keto-hydrazone) and an organic field-effect transistor

Published:2021 Issue:2 Volume:8 Page:525-537
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Yuvaraja Saravanan¹²³⁴⁵^ORCID,Bhyranalyar Veerabhadraswamy Nagarajappa⁶⁷⁸⁹^ORCID,Bhat Sachin Ashok⁶⁷⁸⁹,Surya Sandeep Goud¹²³⁴⁵^ORCID,Yelamaggad Channabasaveshwar Veerappa⁶⁷⁸⁹^ORCID,Salama Khaled Nabil¹²³⁴⁵^ORCID

Affiliation:

1. Sensors lab

2. Advanced Membranes and Porous Materials Center

3. Computer, Electrical and Mathematical Science and Engineering Division

4. King Abdullah University of Science and Technology (KAUST)

5. Thuwal

6. Centre for Nano and Soft Matter Sciences (CeNS)

7. Jalahalli

8. Bengaluru 560 013

9. India

Abstract

The proposed H₂S gas sensor is a novel heterojunction combination that can readily absorb toxic gases, changing the channel resistance of the device. The OFET device is a highly stable and selective tool that can help in taking preventive measures.

Funder

King Abdullah University of Science and Technology

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/MH/D0MH01420F

Reference49 articles.

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