Centimetre-scale single crystal α-MoO<sub>3</sub>: oxygen assisted self-standing growth and low-energy consumption synaptic devices-Reference-Cited by-同舟云学术

Centimetre-scale single crystal α-MoO₃: oxygen assisted self-standing growth and low-energy consumption synaptic devices

Published:2023 Issue:3 Volume:15 Page:1200-1209
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Shan Xin¹²,Wu Zeyu²,Xie Yangyang²,Lin Xin²,Zhou Baozeng²^ORCID,Zhang Yupeng²,Yan Xiaobing³^ORCID,Ren Tianling⁴,Wang Fang²,Zhang Kailiang²^ORCID

Affiliation:

1. School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

2. Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

3. College of Electronic and Information Engineering, Hebei University, Baoding 071000, China

4. School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

Abstract

The centimeter-scale single crystal α-MoO3 was developed via oxygen assisted self-standing growth. The Ti/α-MoO3/Au memristor simulated synaptic properties and achieved low-energy consumption conductance update.

Funder

National Key Research and Development Program of China

Tianjin Science and Technology Program

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR04530C

Reference51 articles.