基于二维α-MoO3 的多值存储特性及其双重导电机制研究-Reference-Cited by-同舟云学术

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基于二维α-MoO3 的多值存储特性及其双重导电机制研究

Published:2023-11-28 Issue:12 Volume:66 Page:4773-4781
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Shan Xin,Liu Ping,Wang Fang,Xie Yangyang,Wei Junqing,Ma Zexia,Shi Yao,Sun Han,Lu Shihao,Song Zhitang,Yan Xiaobing,Zhang Kailiang

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-023-2653-x.pdf

Reference38 articles.

1. Shulaker MM, Hills G, Park RS, et al. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip. Nature, 2017, 547: 74–78

2. Zidan MA, Strachan JP, Lu WD. The future of electronics based on memristive systems. Nat Electron, 2018, 1: 22–29

3. Salahuddin S, Ni K, Datta S. The era of hyper-scaling in electronics. Nat Electron, 2018, 1: 442–450

4. Sebastian A, Le Gallo M, Khaddam-Aljameh R, et al. Memory devices and applications for in-memory computing. Nat Nanotechnol, 2020, 15: 529–544

5. Zhang J, Yang T, Wang J, et al. Memristive device with highly continuous conduction modulation and its underlying physical mechanism for electronic synapse application. Sci China Mater, 2021, 64: 179–188

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses;Applied Surface Science;2024-12

2. Vacancy-Driven Resistive Switching Behavior Based on Wafer-Scale Mose2 Artificial Synapses for Neuromorphic Applications;2024

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