The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration
Author:
Affiliation:
1. State Key Laboratory of Luminescent Materials and Devices
2. South China University of Technology
3. Guangzhou 510640
4. China
5. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province
Abstract
Indium-assisted method is applied to inhibit NR coalescence, and the mechanism of In-assisted growth of well-separated (In)GaN NRs is elucidated.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR04555G
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