Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence-Reference-Cited by-同舟云学术

Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence

Published:2016-08-16 Issue:9 Volume:16 Page:5340-5346
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Müller Marcus¹,Veit Peter¹,Krause Florian F.²,Schimpke Tilman³,Metzner Sebastian¹,Bertram Frank¹,Mehrtens Thorsten²,Müller-Caspary Knut²,Avramescu Adrian³,Strassburg Martin³,Rosenauer Andreas²,Christen Jürgen¹

Affiliation:

1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg, 39106 Germany

2. Institute of Solid State Physics, University of Bremen, Bremen, 28359 Germany

3. OSRAM Opto Semiconductors GmbH, Regensburg, 93055 Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01062

Reference43 articles.

1. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

2. GaN based nanorods for solid state lighting

3. Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

4. Group III nitride core-shell nano- and microrods for optoelectronic applications

5. Threading defect elimination in GaN nanowires

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evidence of two-dimensional lateral quantum confinement in self-formed core–shell InGaN nanowires on Si (111) emitting in the red;Applied Physics Letters;2024-05-27

2. Atom counting based on Voronoi averaged STEM intensities using a crosstalk correction scheme;Ultramicroscopy;2024-02

3. Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency;Crystals;2023-11-23

4. Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111);Journal of Applied Physics;2023-07-26

5. Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters;Crystal Growth & Design;2022-08-08