Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites

Published:2015 Issue:124 Volume:5 Page:102772-102779
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lee Nodo¹²³⁴,Lansac Yves⁵⁶⁷⁸⁹,Hwang Hyunsang¹⁰¹¹¹²⁴,Jang Yun Hee¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Gwangju Institute of Science and Technology

3. Gwangju 61005

4. Korea

5. GREMAN

6. UMR 7347

7. Université François Rabelais

8. 37200 Tours

9. France

10. Department of Materials Science and Engineering

11. Pohang University of Science and Technology

12. Pohang 37673

Abstract

The oxygen vacancy formation in half-metallic perovskite LSMO itself plays an interesting role in the resistive switching.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA21982E

Reference129 articles.

1. The missing memristor found

2. Nanoionics-based resistive switching memories

3. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

4. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface

5. Direct resistance profile for an electrical pulse induced resistance change device

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Base Metals Induced Oxygen Migration and Adjustable Performance in Multifunctional Oxide Heterojunction Devices;Advanced Functional Materials;2024-08-04

2. Topotactic transformation of perovskite-based manganite film triggered via simple oxygen getter layer;Ceramics International;2024-04

3. Emerging memristors and applications in reservoir computing;Frontiers of Physics;2023-11-28

4. Epitaxial La_0.5Sr_0.5MnO_3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States;Advanced Materials Interfaces;2023-04-18

5. Effect of correlated oxide electrodes on disorder pinning and thermal roughening of ferroelectric domain walls in epitaxial PbZr0.2Ti0.8O3 thin films;Physical Review Materials;2021-07-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3