Inkjet-printed h-BN memristors for hardware security-Reference-Cited by-同舟云学术

Inkjet-printed h-BN memristors for hardware security

Published:2023 Issue:23 Volume:15 Page:9985-9992
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhu Kaichen¹²³,Vescio Giovanni²,González-Torres Sergio²^ORCID,López-Vidrier Julià²,Frieiro Juan Luis²,Pazos Sebastian¹,Jing Xu³,Gao Xu³^ORCID,Wang Sui-Dong³^ORCID,Ascorbe-Muruzábal Joaquín⁴,Ruiz-Fuentes Juan A.⁴,Cirera Albert²^ORCID,Garrido Blas²,Lanza Mario¹^ORCID

Affiliation:

1. Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

2. MIND, Department of Electronic and Biomedical Engineering, Universitat de Barcelona, Martí i Franquès 1, E-08028 Barcelona, Spain

3. Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science & Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, P. R. China

4. Nadetech, Polígono Arbide, Calle V Nave 4, 31110 Noáin, Spain

Abstract

Inkjet-printed h-BN memristors exhibit multiple stochastic phenomena that are very attractive for use as entropy sources in electronic circuits for data encryption. The high variability can be exploited to create unique and unpredictable patterns.

Funder

National Key Research and Development Program of China

King Abdullah University of Science and Technology

Ministerio de Economía y Competitividad

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00030C

Reference34 articles.