Silicon nanomembrane-based near infrared phototransistor with positive and negative photodetections-Reference-Cited by-同舟云学术

Silicon nanomembrane-based near infrared phototransistor with positive and negative photodetections

Published:2019 Issue:36 Volume:11 Page:16844-16851
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Pan Ruobing¹²³⁴⁵,Guo Qinglei⁶⁷⁸⁹,Cao Jun¹⁰³⁴⁵,Huang Gaoshan¹²³⁴⁵^ORCID,Wang Yang¹²³⁴⁵,Qin Yuzhou¹²³⁴⁵,Tian Ziao¹¹¹²¹³¹⁴⁵,An Zhenghua¹⁰³⁴⁵,Di Zengfeng¹¹¹²¹³¹⁴⁵,Mei Yongfeng¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science

2. State Key Laboratory of ASIC and Systems

3. Fudan University

4. Shanghai 200433

5. People's Republic of China

6. Center of Nanoelectronics and School of Microelectronics

7. Shandong University

8. Jinan 250100

9. P. R. China

10. Department of Physics

11. State Key Laboratory of Functional Materials for Informatics

12. Shanghai Institute of Microsystem and Information Technology

13. Chinese Academy of Sciences

14. Shanghai 200050

Abstract

Near infrared photodiode and phototransistor were fabricated on silicon nanomembranes with nanostructures, and both positive and negative photodetections were realized.

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Key Technologies Research and Development Program

Program of Shanghai Academic Research Leader

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR05189A

Reference39 articles.