Electroforming and resistive switching in silicon dioxide resistive memory devices-Reference-Cited by-同舟云学术

Electroforming and resistive switching in silicon dioxide resistive memory devices

Published:2015 Issue:27 Volume:5 Page:21215-21236
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Fowler Burt W.¹²³,Chang Yao-Feng⁴⁵²³,Zhou Fei⁴⁵²³,Wang Yanzhen⁴⁵²³,Chen Pai-Yu⁴⁵²³,Xue Fei⁴⁵²³,Chen Yen-Ting⁴⁵²³,Bringhurst Brad¹²³,Pozder Scott⁶⁷³,Lee Jack C.⁴⁵²³

Affiliation:

1. PrivaTran, LLC

2. Austin

3. USA

4. Department of Electrical and Computer Engineering

5. University of Texas

6. Global Foundries

7. Malta

Abstract

Electroforming and resistive switching data are presented and models are given addressing the unusual operating features of SiO₂ resistive memory.

Funder

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA16078A

Reference110 articles.

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5. Resistive switching in silicon suboxide films

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