Impact of ammonium sulfide solution on electronic properties and ambient stability of germanium surfaces: towards Ge-based microelectronic devices-Reference-Cited by-同舟云学术

Impact of ammonium sulfide solution on electronic properties and ambient stability of germanium surfaces: towards Ge-based microelectronic devices

Published:2013 Issue:26 Volume:1 Page:4105
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Fleischmann Claudia,Schouteden Koen,Müller Matthias,Hönicke Philipp,Beckhoff Burkhard,Sioncke Sonja,Boyen Hans-Gerd,Meuris Marc,Van Haesendonck Chris,Temst Kristiaan,Vantomme André

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC30424H

Reference48 articles.

1. Chalcogenide passivation of III–V semiconductor surfaces

2. Surface Defects and Passivation of Ge and III–V Interfaces

3. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

4. Chemisorption of sulfur on Ge(100)

5. Semiconductor-surface restoration by valence-mending adsorbates: Application to Si(100):S and Si(100):Se

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