Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors-Reference-Cited by-同舟云学术

Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors

Published:2016 Issue:22 Volume:4 Page:5102-5108
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Simanullang Marolop¹²³⁴^ORCID,Wisna G. Bimananda M.⁵⁶⁷⁸,Usami Koichi¹²³⁴,Cao Wei⁹¹⁰¹¹¹²,Kawano Yukio¹²³⁴,Banerjee Kaustav⁹¹⁰¹¹¹²,Oda Shunri¹²³⁴

Affiliation:

1. Quantum Nanoelectronics Research Center

2. Tokyo Institute of Technology

3. Tokyo 152-8552

4. Japan

5. Department of Engineering Physics

6. Bandung Institute of Technology

7. Bandung 40132

8. Indonesia

9. Department of Electrical and Computer Engineering

10. University of California

11. Santa Barbara

12. USA

Abstract

The experimental demonstration of high-performance p-type enhancement-mode field-effect transistors fabricated from undoped and catalyst-free germanium nanowires.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC00352D

Reference31 articles.

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2. Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

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4. CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing

5. Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

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