Controllable p-type doping of monolayer MoS<sub>2</sub> with tantalum by one-step chemical vapor deposition-Reference-Cited by-同舟云学术

Controllable p-type doping of monolayer MoS₂ with tantalum by one-step chemical vapor deposition

Published:2022 Issue:19 Volume:10 Page:7662-7673
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Mengge¹,Wu Xiaoxiang¹,Guo Wenxuan¹,Liu Yali¹,Xiao Cong¹,Ou Tianjian¹,Zheng Yuan¹,Wang Yewu²^ORCID

Affiliation:

1. Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China

2. Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China

Abstract

The synthesis of controllable pure and p-type in situ Ta-doped monolayer MoS2 with different doping concentrations via a one-step salt-assisted chemical vapor deposition (CVD) method with systematic characterization studies is reported.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01045C

Reference61 articles.

1. Chemical Vapor Deposition Grown Wafer-Scale 2D Tantalum Diselenide with Robust Charge-Density-Wave Order

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides