Water-induced dual ultrahigh mobilities over 400 cm2 V−1 s−1 in 2D MoS2 transistors for ultralow-voltage operation and photoelectric synapse perception-Reference-Cited by-同舟云学术

Water-induced dual ultrahigh mobilities over 400 cm² V⁻¹ s⁻¹ in 2D MoS₂ transistors for ultralow-voltage operation and photoelectric synapse perception

Published:2022 Issue:13 Volume:10 Page:5249-5256
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xie Dingdong¹^ORCID,Wei Liubo¹,Wei Ziqing¹,He Jun¹,Jiang Jie¹^ORCID

Affiliation:

1. Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China

Abstract

A facile and effective strategy to significantly enhance the field-effect mobility over 400 cm2 V−1 s−1 is proposed by capping the water molecules on the 2D MoS2 surface of transistors, which can be used to achieve some intriguing synapse behaviors.

Funder

National Natural Science Foundation of China

Central South University

Fundamental Research Funds for the Central Universities of Central South University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC06010D

Reference52 articles.

1. Electric Field Effect in Atomically Thin Carbon Films