Anisotropic optical properties of GeS investigated by optical absorption and photoreflectance-Reference-Cited by-同舟云学术

Anisotropic optical properties of GeS investigated by optical absorption and photoreflectance

Published:2020 Issue:6 Volume:1 Page:1886-1894
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Tołłoczko Agata¹²³⁴⁵^ORCID,Oliva Robert¹²³⁴⁵^ORCID,Woźniak Tomasz¹²³⁴⁵,Kopaczek Jan¹²³⁴⁵,Scharoch Paweł¹²³⁴⁵,Kudrawiec Robert¹²³⁴⁵

Affiliation:

1. Department of Semiconductor Materials Engineering

2. Faculty of Fundamental Problems of Technology

3. Wroclaw University of Science and Technology

4. 50-370 Wrocław

5. Poland

Abstract

We present a comprehensive study of bulk GeS optical properties and their anisotropy, by investigation of the fundamental band gap of the material and the energetically higher direct transitions.

Funder

H2020 Marie Skłodowska-Curie Actions

Narodowe Centrum Nauki

Ministerstwo Nauki i Szkolnictwa Wyższego

Publisher

Royal Society of Chemistry (RSC)

Subject

Microbiology

Link

http://pubs.rsc.org/en/content/articlepdf/2020/MA/D0MA00146E

Reference64 articles.

1. 2D materials and van der Waals heterostructures

2. A. V. Kolobov and J.Tominaga , Two-Dimensional Transition-Metal Dichalcogenides , Springer International Publishing , 2016

3. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives

4. Hidden spin-polarized bands in semiconducting 2H-MoTe2

5. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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