Pressure evolution of the potential barriers of phase transition of MoS2, MoSe2 and MoTe2
Author:
Affiliation:
1. College of Materials Science and Engineering
2. Jilin University
3. Changchun 130012
4. China
5. Department of Physics and Astronomy
6. University of Missouri
7. Columbia
8. USA
Abstract
Two-dimensional crystals with weak layer interactions, such as transitional metal dichalcogenides, have been a focus of research recently.
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP00715E
Reference43 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Single-layer MoS2 transistors
3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
4. Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
5. Emerging Photoluminescence in Monolayer MoS2
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of plasma-induced phase transition on contact resistance in MoTe2 with varying thickness;Materials Science in Semiconductor Processing;2024-01
2. Property modulations of two-dimensional materials under compression;Nano Research Energy;2023-12
3. Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides;Small Science;2023-11-27
4. Large sliding regulation in van der waals layered nonlinear optical ternary chalcogenides;npj Computational Materials;2023-09-22
5. Atomic-scale friction of rotating N2/CO2 adsorbed on black phosphorene surface: Ultra-low friction and “superlubricity” induced by the critical loads;Tribology International;2023-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3