Influence of plasma-induced phase transition on contact resistance in MoTe2 with varying thickness-Reference-Cited by-同舟云学术

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Influence of plasma-induced phase transition on contact resistance in MoTe2 with varying thickness

Published:2024-01 Issue: Volume:169 Page:107889
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Qi Renxian,Ding Yang,Zhou Leyun,Wang Chenglin,Lin Liangliang,Cai Zhengyang,Xiao Shaoqing,Gu Xiaofeng,Nan Haiyan^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Chemistry, functionalization, and applications of recent monoelemental two-dimensional materials and their heterostructures;Xie;Chem. Rev.,2021

2. Pressure evolution of the potential barriers of phase transition of MoS2, MoSe2 and MoTe2;Fan;Phys. Chem. Chem. Phys.,2016

3. Two-dimensional phase-engineered 1T′– and 2H–MoTe2-based near-infrared photodetectors with ultra-fast response;Kim;J. Alloys Compd.,2019

4. High performance multilayer MoS2 transistors with scandium contacts;Das;Nano Lett.,2013

5. Contact engineering for 2D materials and devices;Schulman;Chem. Soc. Rev.,2018

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