Nonvolatile memory devices based on carbon nano-dot doped poly(vinyl alcohol) composites with low operation voltage and high ON/OFF ratio-Reference-Cited by-同舟云学术

Nonvolatile memory devices based on carbon nano-dot doped poly(vinyl alcohol) composites with low operation voltage and high ON/OFF ratio

Published:2015 Issue:34 Volume:5 Page:26886-26890
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Meng Lingqiang¹²³⁴⁵,Lan Minhuan¹²³⁴⁵,Guo Liang¹²³⁴⁵,Xie Lisha⁶⁷⁴⁵,Hui Wang Hui Wang¹²³⁴⁵,Ge Jiechao¹²³⁴⁵,Liu Weimin¹²³⁴⁵,Wang Ying¹²³⁴⁵,Wang Pengfei¹²³⁴⁵

Affiliation:

1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials

2. Technical Institute of Physics and Chemistry

3. Chinese Academy of Sciences

4. Beijing

5. China

6. College of Life Science and Technology

7. University of Chemical Technology

Abstract

Carbon nano-dots were synthesized by a hydrothermal method and integrated into the poly(vinyl alcohol) matrix as charge carrier trapping centers for nonvolatile memory devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA16563B

Reference31 articles.

1. Programmable polymer thin film and non-volatile memory device

2. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

3. Nonvolatile Memory Elements Based on Organic Materials

4. Organic Nonvolatile Memory Devices Based on Ferroelectricity

5. Programmable Bipolar and Unipolar Nonvolatile Memory Devices Based on Poly(2-(N-carbazolyl)ethyl methacrylate) End-Capped with Fullerene

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