Two-dimensional IV–VI materials with in-plane negative Poisson's ratio and anisotropic carrier mobility-Reference-Cited by-同舟云学术

Two-dimensional IV–VI materials with in-plane negative Poisson's ratio and anisotropic carrier mobility

Published:2020 Issue:30 Volume:8 Page:10382-10389
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jing Tao¹²³⁴^ORCID,Liang Dongmei¹²³⁴,Deng Mingsen⁵⁶⁷⁸⁴^ORCID,Cai Shaohong⁹¹⁰¹¹⁴

Affiliation:

1. College of Science

2. Kaili University

3. Kaili 556011

4. People's Republic of China

5. Guizhou Provincial Key Laboratory of Computational Nano-Material Science

6. Applied Physics Institute

7. Guizhou Education University

8. Guiyang 550018

9. Guizhou Key Laboratory of Economic System Simulation

10. Guizhou University of Finance and Economics

11. Guiyang 550004

Abstract

Two-dimensional (2D) semiconductors with novel mechanical behaviors and electronic features are highly sought for a variety of potential applications.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02415E

Reference45 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional semiconductors for transistors

3. Two-Dimensional PC6 with Direct Band Gap and Anisotropic Carrier Mobility

4. TiC3 Monolayer with High Specific Capacity for Sodium-Ion Batteries

5. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

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