Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO2 multilayers-Reference-Cited by-同舟云学术

Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO2 multilayers

Published:2021 Issue:46 Volume:13 Page:19617-19625
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Trad Fatme¹,Giba Alaa E.¹²,Devaux Xavier¹^ORCID,Stoffel Mathieu¹^ORCID,Zhigunov Denis³,Bouché Alexandre¹,Geiskopf Sébastien¹,Demoulin Rémi⁴,Pareige Philippe⁴,Talbot Etienne⁴,Vergnat Michel¹^ORCID,Rinnert Hervé¹^ORCID

Affiliation:

1. Université de Lorraine, CNRS, Institut Jean Lamour, F-54000 Nancy, France

2. National Institute of Laser Enhanced Sciences, Cairo University, Giza 12613, Egypt

3. Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, bld. 1, 121205 Moscow, Russia

4. Normandie Univ., UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen, France

Abstract

Localization at the nanoscale and influence of P atoms on optically active Si-NCs embedded in a SiO2 matrix.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR04765E

Reference38 articles.

1. Silicon nanostructures for photonics and photovoltaics

2. Silicon nanocrystals-based electroluminescent resistive switching device

3. Silicon nanocrystals for the development of sensing platforms

4. Multiple Exciton Generation in Colloidal Silicon Nanocrystals

5. Size-Dependence of Acceptor and Donor Levels of Boron and Phosphorus Codoped Colloidal Silicon Nanocrystals

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